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英飞凌推出GaN器件用于移动基站发射机

关键词:英飞凌GaN器件 移动基站发射机 5G移动通信基础设施

时间:2015-09-10 13:45:53      来源:中电网

国际即时新品(原文:英文)

Infineon introduces GaN devices for mobile base-station transmitters;charts path to 5G cellular infrastructure

In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide (GaN-on-SiC) RF power transistors.

Infineon says that, as part of its GaN portfolio, the devices allow mobile base-station manufacturers to build smaller, more powerful and more flexible transmitters. With higher efficiency, improved power density and more bandwidth than existing RF power transistors, the new devices improve the economics of building infrastructure to support current cellular networks, claims the firm. They should also pave the way for the transition to 5G technology with higher data volumes, it adds.

"This new device family combines innovation with knowledge of the application requirements for cellular infrastructure to provide our global customer base with next-generation RF power transistors, says Gerhard Wolf, VP & general manager of Infineon's RF Power product line. "They allow significant improvement in the operating performance and reduction in size of the transmitter side of mobile base stations," he adds. "Additionally, with the transition to wide-bandgap semiconductor technology, we are setting the pace for the continued evolution of the cellular infrastructure."

The new RF power transistors leverage the performance of GaN technology to achieve 10% higher efficiency and five times the power density of the LDMOS transistors commonly used today, it is reckoned. This translates to smaller footprints and power requirements for the power amplifiers (PA) of base-station transmitters currently in use, which operate in either the 1.8-2.2 or 2.3-2.7GHz frequency range. Future GaN-on-SiC devices will also support 5G cellular bands up to the 6GHz frequency range. Infineon reckons that this roadmap allows it to build on its expertise and production technologies for RF transistor technology.

Design flexibility and support for the next-generation of 4G technology are additional benefits of GaN devices for RF power applications. The new devices have twice the RF bandwidth of LDMOS, so that one power amplifier (PA) can support multiple operating frequencies. They also have increased instantaneous bandwidth available for transmitters, which lets a carrier offer higher dates using the data aggregation technique specified for 4.5G cellular networks.

Engineering samples and reference designs are available to customers under specific non-disclosure agreements (NDA).

Earlier this year, Infineon described its broadened patent portfolio related to GaN and announced the expansion of its GaN-on-silicon (GaN/Si) range, GaN/Si epitaxy process and 100-600V technologies resulting from the acquisition of International Rectifier. Infineon also announced a strategic partnership aimed at integrating enhancement-mode GaN-on-silicon transistor structure into its surface-mount device (SMD) packages, providing a highly efficient, easy-to-use 600V GaN power device with the added benefit of dual sourcing.









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英飞凌推出GaN器件用于移动基站发射机

在展位C309(馆恩斯)的欧洲微波周(EuMW 2015年)在巴黎,法国(9月六日至11日),德国慕尼黑的英飞凌科技股份公司,先后引进德国氮化镓的碳化硅家庭(GaN-它的第一个设备在-SiC)的射频功率晶体管。

英飞凌称,作为其氮化镓产品系列的一部分,该设备允许移动基站制造商建立更小,功能更强大,更灵活的发射器。凭借更高的效率,提高了功率密度,比现有的射频功率晶体管更多的带宽,新器件改善基础设施建设,以支持当前的蜂窝网络的经济性,声称该公司。他们也应该铺平道路具有更高​​的数据量过渡到5G技术,它增加了。

“这个新器件系列结合了创新,为移动通信基础设施应用需求的知识为我们的全球客户群提供下一代RF功率晶体管,说格哈德·沃尔夫,副总裁,英飞凌的射频功率产品线的总经理。”他们让显著改善在经营业绩和减少在移动基站的发射机端的大小,“他补充道,”另外,过渡到宽带隙半导体技术,我们设置了蜂窝基础设施的不断发展的步伐。“

所述新RF功率晶体管的杠杆GaN技术的性能达到更高的10%的效率和LDMOS晶体管今天常用的五倍的功率密度,这是不可忽视。这转化为更小的空间和功率要求的基站发射机的功率放大器(PA)的当前使用,这无论是在1.8-2.2或2.3-2.7GHz的频率范围内工作。未来的GaN-ON-SiC器件还支持5G蜂窝频段高达6GHz的频率范围。英飞凌估计,这个路线图使其能够利用其专业知识和生产技术的RF晶体管技术。

设计的灵活性以及对下一代4G技术的支持是GaN器件用于RF功率应用的额外的好处。新的设备具有的LDMOS的射频带宽的两倍,这样,一个功率放大器(PA)的可支持多个工作频率。他们还增加了瞬时带宽可用于发射器,它可以让运营商提供采用了4.5G蜂窝网络中指定的数据聚合技术更高的日期。

工程样片和参考设计是在特定的保密协议(NDA)提供给客户。

今年早些时候,英飞凌阐述了其扩大专利组合相关的氮化镓,并宣布其氮化镓上硅(氮化镓/ Si)的范围内,甘/硅外延工艺和100-600V技术从收购国际整流器产生的扩张。英飞凌还宣布了旨在增强型氮化镓上硅晶体管结构集成到其表面贴装器件(SMD)封装,提供了一个高效的,易于​​使用的600V的GaN功率器件具有双重的好处了战略合作伙伴关系采购。

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