关键词:Renesas 硅栅CMOS工艺 R8C/20 R8C/21
时间:2013-04-16 15:25:54 来源:中电网
“R8C/20和R8C/21系列采用了高性能硅栅CMOS工艺,和R8C的CPU核,为48-pin塑料成型LQFP封装。该 MCU使用复杂指令操作,具有高水平指令效率。 它的1兆字节的地址空间,使它能够高速执行指令。此外,R8C/21系列还内嵌数据闪存(1 KB×2块)。R8C/20和R8C/21组之间的差异只是,是否具有数据闪存,它们的外围功能是相同的
”The R8C/20 and R8C/21 Groups are built using the high-performance silicon gate CMOS process using the R8C CPU core and arepackaged in a 48-pin plastic molded LQFP. The MCUs operate using sophisticated instructions featuring a high level of instruction efficiency. With 1 Mbyte of address space, it is capable of executing instructions at high speed. This Furthermore, the data flash (1 KB x 2 blocks) is embedded in the R8C/21 Group.
The difference between R8C/20 and R8C/21 Groups is only the existence of the data flash. Their peripheral functions are the same.
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