NXP高效能超低噪声的微波晶体管BFU725F

BFU725F 采用了创新的硅锗碳 (SiGe:C) BiCMOS制程-QUBiC4X，这是专门为符合现实生活中的高频应用要求所设计的，可提供优越的高功率增益及动态范围组合性能，这个晶体管可谓将砷化镓 (GaAs) 的性能及硅锗碳的可靠性结为一体，但不需像使用砷化镓组件时还要再增加负偏置电压 (negative biasing voltages)的设计，所以在产品应用上更能为客户带来成本效益。

Key Features
?Very low noice of 0.69dB at 6GHz
?High Maximum stable gain (Gms) 27.8dB at 1.8GHz
?High switching frequency - fT > 100GHz, fmax > 150GHz
?Plastic surface mounted package, SOT343F

Key Benefits
Very low noise of 0.4dB at 1.8GHz
High gain of 10dB at 18GHz
SiGe:C process ensures high switching frequency
Cost-effective alternative to GaAs devices

Key Applications
GPS system
DECT Phone
2nd stage LNA and mixer in DBS and LNB
Satellite Radio
WLAN and CDMA applications
Low-noise microwave applications

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